Chinese translation for "voltage increase"
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- 增压
Related Translations:
- Example Sentences:
| 1. | With the increasing of helium content in the mixed gases , the arc voltage increase , and the weld width broaden , especially the weld penetration deepens obviously
随着混合气体中氦气比例的增加，熔深和熔宽均增加，但熔深增加得更明显一些。 | | 2. | The results show that by increasing the beam current or beam radius , the gain of the structure can be increased . the decreasing of the beam voltage increases the gain of the twt but reduces the bandwidth
得出的主要结论为：电流和电子注半径的增大使得该结构的行波管的增益有较大增加，电压的降低可使增益加大但带宽减小。 | | 3. | The pzt ferroelectric films " fatigue characteristics were studied , and here the electrical load was produced by rt6000s ; it was known that with the voltage increasing or frequency reducing , the degree of ferroelectric fatigue decay would increase
然后用rt6000s测试仪加载电载荷，总结得出pzt薄膜的铁电疲劳规律，即加载电压增加或加载频率降低时，铁电极化衰减程度变大。 | | 4. | The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase . this could be mainly due to the influence of surface states
Gaasmesfet动态击穿特性测试结果表明， gaasmesfet的击穿电压随栅极与漏极上所加脉冲电压宽度的增大而增大，这主要是因为表面态的原因。 | | 5. | ( 2 ) the mechanism of laser triggered multi - stage multi - channel switch was studied . the results of experiments and calculations show that the delay and jitter decreased exponentially as the working voltage increased . the delay and jitter decreased as the gas pressure increased ( t _ ( d ) p ~ ( - 1 ) if e / p > 0 . 8 ( e / p ) _ ( lim )
B ：触发延迟与聚焦透镜焦距“ z一pinch ， ，加速器闭合开关技术研究之间存在一定的依赖关系，以nz为工作介质时焦距增长触发延迟上升，欠压比越大触发延迟对焦距的依赖关系越弱;以nz / sf 。 | | 6. | Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高 |
- Similar Words：
- "voltage harmonic" Chinese translation, "voltage hunting" Chinese translation, "voltage imbalance voltage unbalance" Chinese translation, "voltage imbalance， voltage u alance" Chinese translation, "voltage impulse" Chinese translation, "voltage indicator" Chinese translation, "voltage indicator lamp" Chinese translation, "voltage influence" Chinese translation, "voltage input" Chinese translation, "voltage input offset" Chinese translation
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